PLD / Laser-MBE System Lines

  • The Laser Molecular Beam Epitaxy System (MBE) is a PLD (Plused Laser Deposition) equipment that uses a high-power pulsed laser to melt sputtering targets during PVD.
  • It enables atomic control of thickness during deposition of unit or multi-element thin films to manufacture ultra-thin films or super-lattice thin films and can manufacture thin films with the same composition ratio as raw materials which is used for high-quality thin films. It is largely classified into Compact type and Mobile Combi type.

SPECS

1. Compact Laser MBE System ○ Features
  • Easy-to-operate compact design
  • Infrared lamp heating method (Optional: SiC heating available)
  • Easy substrate and target exchange via Transfer Rod
  • Continuous rotation of the target through magnetic coupling
  • Auxiliary ports for mounting various components
2. Mobile Combi-Laser MBE System ○ Features
  • Easy-to-operate compact design
  • Maximum vacuum pressure: 2×10⁻⁹ Torr
  • Combination mask capability with two drive motors
  • Supports up to four targets
  • Standard configuration with two RHEED systems
  • Computer-controlled operation
Configuraion
Deposition Chamber size 300mm×500mmH
Substrate heating 2-inch lamp heating
Target φ20mm×4
Load-lock transfar module φ150mm×200mmH
Transfar rod, 2 substrates, 4 targets
Main vaccum pump Magnetic bearing TMP 800L/s
Combinatorial mask
mechanism		 None (optional)
RHEED None (optional)



Specification

1. Growth chamber

Arrival pressure less than 2.7×10-7Pa (2×10-9Torr)
Chamber ca. φ260mm Spherical (SUS304)
Laser Irradiation through a synthesized quartz window (CF4.5")
Vacuum gauges a nude ionization gauge and a capacitance manometor
Exhaust system
Main pump 300L/s TMP
Fore pump 250L/m scroll pump
Valve CF6" gate valve
Fore-line monitor T/C gauge
Process gas flow
Variable-leak valve
Air vant valve
φ1/4-inch nozzle facing a substrate (SUS)
Target holder with revolver
Target loading φ20mm×4
Target spin mechanism AC motor driven with speed control
Revolution mechanism Stepping motor driven
Revolution control via Lab ViewTM
Substrate holder / heate
Substrate heating a laser diode heating (808nm, 140W) with chiller
Temperature gradient more than 200°C attainable
Temperature maeasurement 180°C~1400°C
(measurable less than φ2mm spot size on a substrate by a pyrometer)
Substrate rotation Stepping-motor driven (sensor equipped)
Substrate size 10mm square
Combinatorial masks
Number of masks Moving mask ×1, Contact mask ×1
Moving mask control LabViewTM controlled motor driven
Parallel Scanning RHEED
device
differentially pumped RHEED gun (CF2.75")
30kv of acceleration voltage
CF6" screen for RHEED pattern observation
Focusing / Scanning coils for area scan of whole substrate surgace
Pattern processing CCD camera, dark box and processing software (LabViewTM)

2. Load-lock chamber

Chamber φ100mm Cylindrical SUS304
Sample capacity substrate ×2, Target ×2
Rotation / Elevation stage
Isolation valve 4.5" gate valve
Substrate/target handling Access door
Vaccuum Monitor nude ionization gauge (CF2.75")
pumping 70L/s TMP
Sample transfer Magnetic coupled transfer rod with tilt mechanism

3. Controlled function

Systematic and fully control of combinatorial sample fabrication with PC via LabViewTM
a) Mask motion
b) Target revolution and arm-angle
c) Substrate rotation control
d) RHEED oscillation monitor
e) Laser trigger
f) Substrate temperature

4. Utilites

Specifications many subject to change for improvement without notice.
AC100V 1φ 50A
AC200V 3φ 50A
O2gas, N2gas
Compressed air 5kg/cm2(pressure regulator supplied)
Cooling water
Any construction of laboratory room is not included.
Gases for user's process are not included.

Option
  • Radigcal beam source
  • Ozone source (or ozonizer component)
  • Laser for abration ; Nd:YAG (3ω 355nm)
  • Laser for abration ; Excimer (KrF 248nm)
  • Optics components and optical box